Articles with "cnfet" as a keyword



High Performance CNFET-based Ternary Full Adders

Sign Up to like & get
recommendations!
Published in 2017 at "IETE Journal of Research"

DOI: 10.1080/03772063.2017.1338973

Abstract: ABSTRACT This paper investigates the use of carbon nanotube field effect transistors (CNFETs) for the design of ternary full adder cells. The proposed circuits have been designed based on the unique properties of CNFETs such… read more here.

Keywords: ternary full; full adders; based ternary; cnfet ... See more keywords

CNFET-OCL: Open-Source Cell Libraries for Advanced CNFET Technologies

Sign Up to like & get
recommendations!
Published in 2024 at "IEEE Access"

DOI: 10.1109/access.2024.3493625

Abstract: In this paper, we propose CNFET-OCL, the first open-source cell libraries for 5-nm and 7-nm carbon nanotube field-effect transistor (CNFET) technologies. Our CNFET-OCL is designed to emulate the predictive 5-nm and 7-nm CNFET technologies presented… read more here.

Keywords: open source; cell libraries; cnfet; cnfet technologies ... See more keywords

Optimization of a Nanoscale Operational Amplifier Based on a Complementary Carbon Nanotube Field-Effect Transistor by Adjusting Physical Parameters

Sign Up to like & get
recommendations!
Published in 2024 at "IEEE Transactions on Nanotechnology"

DOI: 10.1109/tnano.2024.3370098

Abstract: Carbon nanotube field-effect transistors (CNFETs) possess high current density and carrier mobility, enabling high intrinsic gains below the 20-nm technology node. Thus, they demonstrate superior performance compared to traditional silicon analog integrated circuits (ICs). Here,… read more here.

Keywords: physical parameters; carbon nanotube; cnfet; field effect ... See more keywords

Carbon Nanotube SRAM in 5-nm Technology Node Design, Optimization, and Performance Evaluation—Part I: CNFET Transistor Optimization

Sign Up to like & get
recommendations!
Published in 2022 at "IEEE Transactions on Very Large Scale Integration (VLSI) Systems"

DOI: 10.1109/tvlsi.2022.3146125

Abstract: In this article, we propose a carbon nanotube (CNT) field-effect transistor (CNFET)-based static random access memory (SRAM) design at the 5-nm technology node that is optimized based on the tradeoff between performance, stability, and power… read more here.

Keywords: carbon nanotube; technology; cnfet; sram ... See more keywords