HfO2-based resistive switching memory with CNTs electrode for high density storage
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DOI: 10.1016/j.sse.2017.03.004
Abstract: Abstract In this paper, the HfO 2 -based resistive switching memory (RRAM) using carbon nanotubes (CNTs) as contact electrodes for high density integration is demonstrated. The Al/HfO 2 /CNTs devices show self-compliance, forming-free and low… read more here.
Keywords: resistive switching; cnts electrode; high density; based resistive ... See more keywords