LAUSR

Cobalt germanide nanostructure formation and memory characteristic enhancement in silicon oxide films

Sign Up to like & get
recommendations!
0 Published in 2018 at "Journal of Physics and Chemistry of Solids"

DOI: 10.1016/j.jpcs.2018.04.011

Abstract: Abstract We investigated nano-floating gate memory having a charge trap layer (CTL) composed of cobalt germanide nanostructure (ns-CoGe). A tunneling oxide layer; a CTL containing Co, Ge, and Si; and a blocking oxide layer were… read more here.

Keywords: nanostructure formation; germanide nanostructure; formation; cobalt germanide ... See more keywords