Investigation of a Self-Aligned Cobalt Silicide Process for Ohmic Contacts to Silicon Carbide
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DOI: 10.1007/s11664-019-07020-0
Abstract: Previous studies showed that cobalt silicide can form ohmic contacts to p-type 6H-SiC by directly reacting cobalt with 6H-SiC. Similar results can be achieved on 4H-SiC, given the similarities between the different silicon carbide polytypes.… read more here.
Keywords: silicon carbide; self aligned; ohmic contacts; cobalt silicide ... See more keywords