A Near-Infrared CMOS Silicon Avalanche Photodetector with Ultra-Low Temperature Coefficient of Breakdown Voltage
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DOI: 10.3390/mi13010047
Abstract: Silicon avalanche photodetector (APD) plays a very important role in near-infrared light detection due to its linear controllable gain and attractive manufacturing cost. In this paper, a silicon APD with punch-through structure is designed and… read more here.
Keywords: avalanche photodetector; ultra low; coefficient breakdown; silicon avalanche ... See more keywords