Multi‐Level Switching and Reversible Current Driven Domain‐Wall Motion in Single CoFeB/MgO/CoFeB‐Based Perpendicular Magnetic Tunnel Junctions
Sign Up to like & getrecommendations! Published in 2020 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.202000976
Abstract: One of the critical issues in spintronics‐based technologies is to increase the data storage density. Current strategy is based on shrinking the devices size down to tens of nanometers, or several nanometers, which is reaching… read more here.
Keywords: cofeb mgo; multi level; level; mgo cofeb ... See more keywords
Enhanced tunnel magnetoresistance and electric-field effect in CoFeB/MgO/CoFeB perpendicular tunnel junctions with W underlayer
Sign Up to like & getrecommendations! Published in 2017 at "Current Applied Physics"
DOI: 10.1016/j.cap.2017.04.003
Abstract: Abstract We investigated the dependence of tunnel magnetoresistance (TMR) and its electric-field effect in CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJ) on different underlayer (UL) materials. We observed enhancements in the TMR ratio and its temperature dependence… read more here.
Keywords: cofeb; tunnel; cofeb mgo; electric field ... See more keywords
Investigation of split CoFeB/Ta/CoFeB/MgO stacks for magnetic memories applications.
Sign Up to like & getrecommendations! Published in 2018 at "Journal of magnetism and magnetic materials"
DOI: 10.1016/j.jmmm.2018.10.103
Abstract: We report on the static and dynamic magnetic properties of W/CoFeB/Ta/CoFeB/MgO stacks, where the CoFeB layer is split in two by a 0.3 nm-thick Ta "dusting" layer. A total CoFeB thickness between 1.2 and 2.4… read more here.
Keywords: cofeb; mgo stacks; split cofeb; split ... See more keywords
Enhancing perpendicular magnetic anisotropy through dead layer reduction utilizing precise control of Mg insertions
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Magnetism and Magnetic Materials"
DOI: 10.1016/j.jmmm.2020.166956
Abstract: Abstract Using an ultrathin metallic layer of Mg at the CoFeB|MgO interface has been emerged as an appealing solution to efficiently enhance the tunneling magnetoresistance and thermal stability while reducing the resistance-area product and effective… read more here.
Keywords: cofeb; layer; perpendicular magnetic; magnetic anisotropy ... See more keywords
Evaluation of a new MgO barrier based on CoFeB/MgO/CoFeB structure for advanced MRAM applications
Sign Up to like & getrecommendations! Published in 2017 at "Microelectronic Engineering"
DOI: 10.1016/j.mee.2016.09.010
Abstract: MRAM technology offers the opportunity to provide all the advantages of the most popular types of memory, such as DRAM, SRAM and FLASH with none of its disadvantages. Magnetic tunnel junctions (MTJs) based on CoFeB/MgO/CoFeB… read more here.
Keywords: mgo; mgo barrier; cofeb; based cofeb ... See more keywords
The effect of inserted layers on the anomalous Hall effect and perpendicular magnetic anisotropy in Ta/CoFeB/MgO heterostructures
Sign Up to like & getrecommendations! Published in 2018 at "AIP Advances"
DOI: 10.1063/1.5019988
Abstract: In this work, Ta/M/CoFeB/MgO/Ta multilayers were designed to investigate the effect of M insertion on the anomalous Hall effect (AHE) and perpendicular magnetic anisotropy (PMA). Once inserted, Bi did not remain at the interface of… read more here.
Keywords: cofeb; anomalous hall; hall effect; effect ... See more keywords
Bias dependent conductance in CoFeB-MgO-CoFeB magnetic tunnel junctions as an indicator for electrode magnetic condition at barrier interfaces
Sign Up to like & getrecommendations! Published in 2019 at "AIP Advances"
DOI: 10.1063/1.5058265
Abstract: Barrier interface condition is critical for spin-polarized tunneling and spin-transfer torque switching in CoFeB∣MgO∣CoFeB-based magnetic tunnel junctions. The differential tunnel conductance gV contains information on CoFeB’s magnetic properties at tunnel interfaces. Experimentally, we find gV… read more here.
Keywords: cofeb; magnetic tunnel; spin; mgo cofeb ... See more keywords
Flexible CoFeB/MgO-based magnetic tunnel junctions annealed at high temperature (≥350 °C)
Sign Up to like & getrecommendations! Published in 2019 at "Applied Physics Letters"
DOI: 10.1063/1.5128952
Abstract: This study investigates the effect of high-temperature (350–500 °C) annealing on CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) directly formed on a flexible polyimide substrate, which has superior thermal tolerance. As the annealing temperature increases, the tunnel magnetoresistance… read more here.
Keywords: cofeb; temperature; temperature 350; magnetic tunnel ... See more keywords
Temperature dependence of spin/orbital magnetization switching behaviour at the interface in CoFeB/MgO and CoFeB/Ta multi-layered films
Sign Up to like & getrecommendations! Published in 2019 at "Materials Research Express"
DOI: 10.1088/2053-1591/ab332b
Abstract: The temperature dependences of spin/orbital magnetization switching behaviour were measured for CoFeB/MgO and CoFeB/Ta multi-layered films. The magnetization switching behaviours were different between the spin specific magnetic hysteresis (SSMH) curve and the orbital specific magnetic… read more here.
Keywords: orbital magnetization; magnetization; mgo cofeb; cofeb mgo ... See more keywords
DC Bias Reversal Behavior of Spin–Torque Ferromagnetic Resonance Spectra in CoFeB/MgO/CoFeB Perpendicular Magnetic Tunnel Junction
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Magnetics"
DOI: 10.1109/tmag.2017.2707081
Abstract: Spin–torque ferromagnetic resonance (ST-FMR) spectra of nano-scaled CoFeB/MgO/CoFeB full perpendicular magnetic tunnel junctions (p-MTJs) were investigated, especially in detail at low dc-bias voltage region. Usually in in-plane magnetized MTJs (i-MTJs), the ST-FMR spectrum line shape… read more here.
Keywords: cofeb; spin torque; ferromagnetic resonance; torque ferromagnetic ... See more keywords
Influence of Hard Mask Materials on the Magnetic Properties of Perpendicular MTJs With Double CoFeB/MgO Interface
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Magnetics"
DOI: 10.1109/tmag.2020.3004576
Abstract: We investigated the influence of hard mask (HM) materials on tunnel magnetoresistance (TMR) properties and magnetic properties for the magnetic tunnel junctions with pependicular easy axis (p-MTJs) with double CoFeB/MgO interface annealed at 400 °C… read more here.
Keywords: double cofeb; cofeb mgo; layer; magnetic properties ... See more keywords