A Bridge-Level Junction Temperature Estimation Method for SiC MOSFETs Combining Transient Voltage and Current Peaks
Sign Up to like & getrecommendations! Published in 2023 at "Energies"
DOI: 10.3390/en16104105
Abstract: Accurate measurement of the junction temperature Tj is crucial for ensuring safe operation and evaluating the performance of silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors (MOSFETs). In this paper, the junction temperature of a half-bridge is… read more here.
Keywords: junction temperature; transient voltage; combining transient; voltage ... See more keywords