Investigating the impact of substrate defects on Ga2O3/GaN-based ultraviolet photodetector by designing a common-connected electrode.
Sign Up to like & getrecommendations! Published in 2025 at "Optics letters"
DOI: 10.1364/ol.574719
Abstract: Ga2O3/GaN hybrid ultraviolet (UV) photodetector (PD) has photon-carriers generated in the Ga2O3 region and transported in the GaN layer. In this work, by designing Ga2O3/GaN UV PD with a gate metal on the Ga2O3 surface,… read more here.
Keywords: impact substrate; ultraviolet photodetector; ga2o3 gan; common connected ... See more keywords