Toward an In-Depth Understanding of the Commutation Processes in a SiC mosfet Switching Cell Including Parasitic Elements
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Industry Applications"
DOI: 10.1109/tia.2020.2995331
Abstract: This article provides in-depth insight into the commutation processes of high-speed SiC mosfets and investigates how they are influenced by various parasitic inductances. The switching dynamics of wide-bandgap power semiconductor devices are significantly larger compared… read more here.
Keywords: switching cell; parasitic inductances; parasitic elements; commutation ... See more keywords