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Published in 2018 at "Microsystem Technologies"
DOI: 10.1007/s00542-017-3330-z
Abstract: This paper presents a new compact modeling technique to describe the convective heat transfer realized by laminar flow of coolant in integrated microchannels used for thermal management of 3D ICs—with the aim of being able…
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Keywords:
approach microchannel;
validation;
modeling approach;
model ... See more keywords
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Published in 2019 at "Journal of Computational Electronics"
DOI: 10.1007/s10825-019-01328-0
Abstract: This paper presents a physics-based compact model able to describe the time dynamics of the erase operation in three-dimensional NAND Flash strings exploiting gate-induced drain leakage at the selector to increase the string potential. The…
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Keywords:
modeling gidl;
flash strings;
nand flash;
compact modeling ... See more keywords
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Published in 2020 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2019.107731
Abstract: Abstract In this work, we present a compact modeling of capacitorless A2RAM memory cell. It is obtained by combining A2RAM DC compact model with an equivalent circuit that mimics the memory state. The DC modeling…
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Keywords:
a2ram compact;
compact modeling;
modeling dram;
memory ... See more keywords
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Published in 2017 at "Journal of Lightwave Technology"
DOI: 10.1109/jlt.2017.2706721
Abstract: Photonic-integrated circuits fabricated on a heterogeneously integrated silicon platform have demonstrated record levels of integration and communication capacity. As photonic-integrated circuits become larger and more complex, designing and analyzing them demand modeling and simulation methodologies…
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Keywords:
photonic integrated;
integrated circuits;
heterogeneously integrated;
compact modeling ... See more keywords
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Published in 2022 at "IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems"
DOI: 10.1109/tcad.2021.3134888
Abstract: A methodology to create and develop electrical compact models for memristive devices is presented. It comprises a six-step algorithm that uses experimental data of memristive devices in order to obtain a compact model suitable for…
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Keywords:
compact modeling;
methodology;
memristive devices;
experimental data ... See more keywords
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Published in 2019 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2018.2856891
Abstract: This paper presents the derivation of a compact dc modeling approach for the band-to-band tunneling current in double-gate tunnel-field effect transistors (TFETs). The physics-based model equations are solved in closed form by including 2-D effects…
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Keywords:
gate tunnel;
physics;
physics based;
double gate ... See more keywords
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Published in 2020 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2020.3024477
Abstract: Previous work has shown that optomechanical resonators are particularly well suited to the design of ultrasensitive mass sensors. They present an extremely low noise level, very high optical quality factor ( ${Q}>{10}^{5}$ ), excellent integration…
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Keywords:
behavioral simulation;
simulation optomechanical;
compact modeling;
modeling behavioral ... See more keywords
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Published in 2017 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2017.2712284
Abstract: We have presented a compact MOSFET model, which allows us to describe the current–voltage characteristics of irradiated long-channel and short-channel transistors in all operation modes at different measurement temperatures and interface trap densities. The model…
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Keywords:
mosfet;
model;
compact modeling;
simulation ... See more keywords
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Published in 2019 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2019.2920629
Abstract: This paper presents a compact model of latchup considering design and process dependence. The new approach is more realistic and inspirited from the classical model. This model was used to confirm the single-event latchup (SEL)…
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Keywords:
single event;
event latchup;
compact modeling;
latchup ... See more keywords
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Published in 2021 at "Micromachines"
DOI: 10.3390/mi12020199
Abstract: We propose a surface potential (SP)-based compact model of p-GaN gate high electron mobility transistors (HEMTs) which solves the Poisson equation. The model includes all possible charges in the GaN channel layer, including the unintended…
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Keywords:
modeling gan;
gan gate;
compact modeling;
potential based ... See more keywords