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Published in 2018 at "Microsystem Technologies"
DOI: 10.1007/s00542-017-3330-z
Abstract: This paper presents a new compact modeling technique to describe the convective heat transfer realized by laminar flow of coolant in integrated microchannels used for thermal management of 3D ICs—with the aim of being able… read more here.
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Published in 2019 at "Journal of Computational Electronics"
DOI: 10.1007/s10825-019-01328-0
Abstract: This paper presents a physics-based compact model able to describe the time dynamics of the erase operation in three-dimensional NAND Flash strings exploiting gate-induced drain leakage at the selector to increase the string potential. The… read more here.
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Published in 2020 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2019.107731
Abstract: Abstract In this work, we present a compact modeling of capacitorless A2RAM memory cell. It is obtained by combining A2RAM DC compact model with an equivalent circuit that mimics the memory state. The DC modeling… read more here.
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Published in 2025 at "Nanotechnology"
DOI: 10.1088/1361-6528/ae00ce
Abstract: This review addresses the compact modeling strategies for field-effect transistors (FETs) based on two-dimensional materials (2D-FETs), which offer excellent electrostatic control and strong scaling potential thanks to their atomically thin channels. Achieving the integration of… read more here.
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Published in 2024 at "IEEE Journal of the Electron Devices Society"
DOI: 10.1109/jeds.2024.3394167
Abstract: This paper presents the cryogenic characterization and compact modeling of thin-oxide MOSFETs in a standard 65-nm Si-bulk CMOS technology. The influence of both short and narrow channel effects at extremely low temperature on key device… read more here.
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Published in 2017 at "Journal of Lightwave Technology"
DOI: 10.1109/jlt.2017.2706721
Abstract: Photonic-integrated circuits fabricated on a heterogeneously integrated silicon platform have demonstrated record levels of integration and communication capacity. As photonic-integrated circuits become larger and more complex, designing and analyzing them demand modeling and simulation methodologies… read more here.
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Published in 2022 at "IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems"
DOI: 10.1109/tcad.2021.3134888
Abstract: A methodology to create and develop electrical compact models for memristive devices is presented. It comprises a six-step algorithm that uses experimental data of memristive devices in order to obtain a compact model suitable for… read more here.
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Published in 2019 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2018.2856891
Abstract: This paper presents the derivation of a compact dc modeling approach for the band-to-band tunneling current in double-gate tunnel-field effect transistors (TFETs). The physics-based model equations are solved in closed form by including 2-D effects… read more here.
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Published in 2020 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2020.3024477
Abstract: Previous work has shown that optomechanical resonators are particularly well suited to the design of ultrasensitive mass sensors. They present an extremely low noise level, very high optical quality factor ( ${Q}>{10}^{5}$ ), excellent integration… read more here.
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Published in 2024 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2023.3321017
Abstract: This study delves deeper into the high-frequency (HF) behavior of state-of-the-art sub-THz silicon-germanium heterojunction bipolar transistors (SiGe HBTs) fabricated with 55 nm BiCMOS process technology from STMicroelectronics. Using measurement data, calibrated TCAD simulations, and compact… read more here.
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Published in 2024 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2024.3439308
Abstract: The nonlinearity and variation of the conductance tunning in resistive switching devices pose challenges in writing discrete levels to multibit cells for data storage and to artificial synapses for neuromorphic applications. Therefore, it is crucial… read more here.