Comparison of holes trapping and protons transport induced by low dose rate gamma radiation in oxide on different SiGe processes
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DOI: 10.1016/j.microrel.2019.113499
Abstract: Abstract Space-related electronics contain different types of oxide isolations which are the crucial factor resulting in device degradation and failure. Previous studies show that the local oxidation of silicon (LOCOS) isolation Silicon‑germanium heterojunction bipolar transistor… read more here.
Keywords: comparison holes; low dose; sige; rate ... See more keywords