Electrical compensation and cation vacancies in Al rich Si-doped AlGaN
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DOI: 10.1063/5.0016494
Abstract: We report positron annihilation results on vacancy defects in Si-doped Al0.90Ga0.10N alloys grown by metalorganic vapor phase epitaxy. By combining room temperature and temperature-dependent Doppler broadening measurements, we identify negatively charged in-grown cation vacancies in… read more here.
Keywords: cation; rich doped; compensation cation; electrical compensation ... See more keywords