Complementary Inverter Circuits Based on p-Cu2O and n-ZTO Thin Film Transistors
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Electronic Materials"
DOI: 10.1007/s11664-019-07704-7
Abstract: This paper describes the fabrication of copper oxide and zinc tin oxide complementary inverters where both the p-type and n-type channels were deposited by RF magnetron sputtering. We have designed low-voltage and high gain complementary… read more here.
Keywords: voltage; complementary inverters; gain; thin film ... See more keywords
Sub-2 V, Transfer-Stamped Organic/Inorganic Complementary Inverters Based on Electrolyte-Gated Transistors.
Sign Up to like & getrecommendations! Published in 2018 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.8b13140
Abstract: Organic/inorganic hybrid complementary inverters operating at low voltages (1 V or less) were fabricated by transfer-stamping organic p-type poly(3-hexylthiophene) (P3HT) and inorganic n-type zinc oxide (ZnO) electrolyte-gated transistors (EGTs). A semicrystalline homopolymer-based gel electrolyte, or… read more here.
Keywords: gated transistors; complementary inverters; organic inorganic; transfer ... See more keywords
Large-scale metal nanoelectrode arrays based on printed nanowire lithography for nanowire complementary inverters.
Sign Up to like & getrecommendations! Published in 2017 at "Nanoscale"
DOI: 10.1039/c7nr06152h
Abstract: Nanowire (NW) complementary inverters based on NW channels and NW electrodes are a promising core logic unit of future subminiature, high density and textile-type configured electronic circuits. However, existing approaches based on short NWs ( read more here.
Keywords: large scale; nanowire complementary; nanoelectrode arrays; complementary inverters ... See more keywords
Shift of Switching Threshold in Low-Dimensional Semiconductor-Based Complementary Inverters via Inkjet Printing.
Sign Up to like & getrecommendations! Published in 2022 at "Nanotechnology"
DOI: 10.1088/1361-6528/ac67ab
Abstract: MoS2 crystals grown by chemical vapor deposition are suited for realization of practical 2D semiconductor-based electronics. In order to construct complementary circuits with n-type MoS2, another p-type semiconductor, whose performance can be adjusted corresponding to… read more here.
Keywords: semiconductor; complementary inverters; switching threshold; semiconductor based ... See more keywords