p-n-p-Based RF Switches for the Mitigation of Single-Event Transients in a Complementary SiGe BiCMOS Platform
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DOI: 10.1109/tns.2017.2780120
Abstract: The benefits of using p-n-p silicon–germanium (SiGe) heterojuction bipolar transistors (HBTs) in radio frequency (RF) circuits for the mitigation of single-event transients (SETs) have been investigated. As a representative circuit example, p-n-p SiGe-HBT RF single-pole… read more here.
Keywords: event transients; mitigation single; sige; based switches ... See more keywords