Vacancy complexes in Cd3As2
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DOI: 10.1063/5.0146429
Abstract: Epitaxial growth of the three-dimensional topological semimetal Cd3As2 on semiconductor substrates enables its use and integration in device applications. Epitaxy also provides an avenue for varying and controlling point defects through modification of the chemical… read more here.
Keywords: vacancy complexes; complexes cd3as2; growth; point defects ... See more keywords