Effects of nitrogen doping on vacancy-oxygen complexes in neutron irradiated Czochralski silicon
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DOI: 10.1016/j.mssp.2019.03.027
Abstract: Abstract We have investigated the effect of nitrogen doping on the evolution of vacancy-oxygen (V-O) complexes in neutron irradiated Czochralski (CZ) silicon. During isothermal anneals in the temperature range of 290–330 °C, it is found that… read more here.
Keywords: vacancy oxygen; oxygen complexes; silicon; complexes neutron ... See more keywords