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Compliance-Free ZrO2/ZrO2 − x/ZrO2 Resistive Memory with Controllable Interfacial Multistate Switching Behaviour

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Published in 2017 at "Nanoscale Research Letters"

DOI: 10.1186/s11671-017-2155-0

Abstract: A controllable transformation from interfacial to filamentary switching mode is presented on a ZrO2/ZrO2 − x/ZrO2 tri-layer resistive memory. The two switching modes are investigated with possible switching and transformation mechanisms proposed. Resistivity modulation of the ZrO2 − x… read more here.

Keywords: zro2 zro2; resistive memory; zro2; compliance free ... See more keywords