Sign Up to like & get
recommendations!
0
Published in 2017 at "Nanoscale Research Letters"
DOI: 10.1186/s11671-017-2155-0
Abstract: A controllable transformation from interfacial to filamentary switching mode is presented on a ZrO2/ZrO2 − x/ZrO2 tri-layer resistive memory. The two switching modes are investigated with possible switching and transformation mechanisms proposed. Resistivity modulation of the ZrO2 − x…
read more here.
Keywords:
zro2 zro2;
resistive memory;
zro2;
compliance free ... See more keywords