Growth and properties of the GaN cap layer strongly influenced by the composition of the underlying AlGaN
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DOI: 10.1016/j.mssp.2021.106125
Abstract: Abstract The growth and properties of the GaN cap layers crystallized by metalorganic vapor phase epitaxy were studied concerning the composition of the underlying AlGaN layer, type of induced strains and the desorption of the… read more here.
Keywords: composition underlying; growth; layer; cap layer ... See more keywords