Influence of GaAs substrate misorientation on the characteristics in undulating compositional step-graded AlGaInAs buffers
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DOI: 10.1007/s10854-019-00871-7
Abstract: Undulating compositional step-graded AlGaInAs buffers are applied to transit the lattice mismatch of 3.8% between InP cap layer and GaAs substrates with misorientation of 2°, 7° and 15° toward (111)A by metal organic chemical vapor… read more here.
Keywords: undulating compositional; substrate misorientation; compositional step; step graded ... See more keywords