Fast-switching SOI-LIGBT with compound dielectric buried layer and assistant-depletion trench
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DOI: 10.1088/1674-1056/ac29ac
Abstract: A lateral insulated gate bipolar transistor (LIGBT) based on silicon-on-insulator (SOI) structure is proposed and investigated. This device features a compound dielectric buried layer (CDBL) and an assistant-depletion trench (ADT). The CDBL is employed to… read more here.
Keywords: cdbl; compound dielectric; dielectric buried; ligbt ... See more keywords