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Published in 2018 at "Journal of Computational Electronics"
DOI: 10.1007/s10825-017-1082-8
Abstract: This paper aims to develop a comprehensive physical model for a bipolar transistor’s polysilicon-contacted emitter. Poisson’s equation is solved numerically in the emitter–base space charge region to specify the boundary conditions and the excess minority…
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Keywords:
analytical model;
semi analytical;
polysilicon;
model ... See more keywords