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Published in 2025 at "MRS Bulletin"
DOI: 10.1557/s43577-025-00990-z
Abstract: The emergence of doped hafnium oxide (HfO2)-based ferroelectric films has enabled highly scalable and silicon-compatible ferroelectric devices, opening new frontiers in neuromorphic and reservoir computing. Among these, ferroelectric field-effect transistors (FeFETs) are particularly promising due…
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Keywords:
computing reservoir;
applications neuromorphic;
neuromorphic computing;
reservoir ... See more keywords