Evaluation of the concentration of point defects in GaN
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DOI: 10.1038/s41598-017-08570-1
Abstract: Photoluminescence (PL) was used to estimate the concentration of point defects in GaN. The results are compared with data from positron annihilation spectroscopy (PAS), secondary ion mass spectrometry (SIMS), and deep level transient spectroscopy (DLTS).… read more here.
Keywords: defects gan; point defects; concentration point; spectroscopy ... See more keywords