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Published in 2022 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.2c12247
Abstract: The switching characteristics and performance of oxide-based memristors are predominately determined by oxygen- or oxygen-vacancy-mediated redox reactions and the consequent formation of conducting filaments (CFs). Devices using oxide thin films as the switching layer usually…
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Keywords:
conductance;
highly linear;
conductance modulation;
hfo2 nanorod ... See more keywords
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Published in 2020 at "Electronics Letters"
DOI: 10.1049/el.2020.0106
Abstract: The authors present a unique application of analogue oxide-based resistive memory (OxRAM) device for sensor-level information storage and computation. They show that quality of low-contrast images in low-light can be improved by carefully exploiting OxRAM…
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Keywords:
application;
conductance modulation;
oxram conductance;
contrast ... See more keywords
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Published in 2022 at "Nanotechnology"
DOI: 10.1088/1361-6528/ac8e0b
Abstract: The artificial synapses are basic units in the hardware implementation of neuromorphic computing, whose performances should be gradually modulated under external stimuli. The underlying mechanism of the increasing and decreasing device conductance is still unclear…
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Keywords:
conductance;
conductance modulation;
tin;
direction conductance ... See more keywords
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Published in 2020 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2020.3025849
Abstract: Increasing computation demand of machine learning (ML) applications (recommender system, image classification, speech recognition, and so on) calls for the development of specialized hardware for ML and neuromorphic computing. New memories, such as resistive random…
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Keywords:
neural networks;
rram;
analog conductance;
bidirectional analog ... See more keywords