Fabrication of vertically conducting near ultraviolet LEDs on SiC substrates
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DOI: 10.1016/j.spmi.2018.09.027
Abstract: Abstract In this work, GaN-based vertically conducting near ultraviolet light-emitting diodes (LEDs) were grown on n-SiC substrates by metal-organic chemical vapor deposition. 10 pairs or 20 pairs of Si-doped n-Al0.2Ga0.8N/n-GaN distributed Bragg reflectors (DBRs) were… read more here.
Keywords: ultraviolet leds; conducting near; near ultraviolet; sic substrates ... See more keywords