Extraction of physical Schottky parameters using the Lambert function in Ni/AlGaN/GaN HEMT devices with defined conduction phenomena
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DOI: 10.1088/1674-4926/38/1/014007
Abstract: Electrical characterization analyses are proposed in this work using the Lambert function on Schottky junctions in GaN wide band gap semiconductor devices for extraction of physical parameters. The Lambert function is used to give an… read more here.
Keywords: conduction phenomena; algan gan; lambert function; defined conduction ... See more keywords