LAUSR

Conduction Response in Highly Flexible Nonvolatile Memory Devices

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0 Published in 2020 at "Advanced Electronic Materials"

DOI: 10.1002/aelm.202000151

Abstract: Resistive random access memories (RRAMs) are promising candidates for future nonvolatile memories. Here, a flexible nonvolatile resistive switching (RS) device is constructed by spin coating an RS film of graphene oxide (GO) incorporating with TiO2… read more here.

Keywords: conduction response; response highly; highly flexible; film ... See more keywords