Unraveling Conductive Filament Formation in High Performance Halide Perovskite Memristor
Sign Up to like & getrecommendations! Published in 2024 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.202400067
Abstract: Halide perovskites (HPs) are promising materials for memristor devices because of their unique characteristics. In this study, nonvolatile resistive switching memory devices based on thick MAPbI3 perovskite (800 nm) films with structure FTO/MAPbI3/polymethyl methacrylate (PMMA)/Ag… read more here.
Keywords: memristor; conductive filament; unraveling conductive; conductive filaments ... See more keywords
Conductive Filament Localization Within Crossbar Resistive Memories by Scanning Joule Expansion Microscopy
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2020.2986543
Abstract: Control of filament growth within conductive bridge random access memories (CBRAM) is of crucial interest in order to ensure the reliability of such emerging devices. Here, we demonstrate that Scanning Joule Expansion Microscopy (SJEM) can… read more here.
Keywords: microscopy; conductive filament; scanning joule; joule expansion ... See more keywords
Probing the Critical Region of Conductive Filament in Nanoscale HfO2 Resistive-Switching Device by Random Telegraph Signals
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2017.2742578
Abstract: Resistive-switching random access memory (RRAM) is widely considered as a disruptive technology. Despite tremendous efforts in theoretical modeling and physical analysis, details of how the conductive filament (CF) in metal-oxide-based filamentary RRAM devices is modified… read more here.
Keywords: random telegraph; conductive filament; switching; resistive switching ... See more keywords