High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN
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DOI: 10.1063/5.0042857
Abstract: We demonstrate Si-implanted AlN with high conductivity (>1 Ω−1 cm−1) and high carrier concentration (5 × 1018 cm−3). This was enabled by Si implantation into AlN with a low threading dislocation density (TDD) ( read more here.
Keywords: type conductivity; conductivity; carrier concentration; conductivity carrier ... See more keywords