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Published in 2017 at "CrystEngComm"
DOI: 10.1039/c6ce02642g
Abstract: The integration of III–V optoelectronic devices on silicon is confronted with the challenge of heat dissipation for reliable and stable operation. A thorough understanding and characterization of thermal transport is paramount for improved designs of,…
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Keywords:
grown inp;
conductivity epitaxially;
thermal conductivity;
epitaxially grown ... See more keywords