Atomistic Origins of Various Luminescent Centers and n-Type Conductivity in GaN: Exploring the Point Defects Induced by Cr, Mn, and O through an Ab Initio Thermodynamic Approach
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DOI: 10.1021/acs.chemmater.4c00178
Abstract: GaN is a technologically indispensable material for various optoelectronic properties, mainly due to the dopant-induced or native atomic-scale point defects that can create single photon emitters, a range of luminescence bands, and n- or p-type… read more here.
Keywords: conductivity gan; point; type conductivity; growth ... See more keywords
Thermal conductivity of GaN single crystals: Influence of impurities incorporated in different growth processes
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DOI: 10.1063/1.5047531
Abstract: The thermal conductivity of GaN crystals grown by different techniques is analyzed using the 3ω method in the temperature range of 30 K to 295 K. GaN wafers grown by the ammonothermal method show a significant variation… read more here.
Keywords: temperature; conductivity gan; thermal conductivity; conductivity ... See more keywords