Sign Up to like & get
recommendations!
1
Published in 2018 at "Semiconductors"
DOI: 10.1134/s1063782618010153
Abstract: Hybrid quantum-confined heterostructures grown by metal-organic vapor-phase epitaxy (MOVPE) via the deposition of In0.4Ga0.6As layers with various nominal thicknesses onto vicinal GaAs substrates are studied by photoluminescence spectroscopy and transmission electron microscopy. The photoluminescence spectra…
read more here.
Keywords:
heterostructures grown;
confined heterostructures;
4ga0 6as;
quantum confined ... See more keywords