Schottky contact diameter effect on the electrical properties and interface states of Ti/Au/p-AlGaAs/GaAs/Au/Ni/Au Be-doped p-type MBE Schottky diodes
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DOI: 10.1088/1361-6641/ac612a
Abstract: Schottky diodes based on Be-doped p-type AlGaAs were grown by molecular beam epitaxy and their current–voltage (I–V) and capacitance–voltage (C–V) characteristics measured. The Schottky and Ohmic contacts are Ti/Au and Au/Ni/Au, respectively. The effect of… read more here.
Keywords: effect; schottky; interface states; schottky contact ... See more keywords