Gate-tunable contact-induced Fermi-level shift in semimetal.
Sign Up to like & getrecommendations! Published in 2022 at "Proceedings of the National Academy of Sciences of the United States of America"
DOI: 10.1073/pnas.2119016119
Abstract: SignificanceResistivity comparison methodology was developed to measure and analyze the contact-induced Fermi-level shift (CIFS) as well as the interfacial charge transfer in low-dimensional semimetal-semiconductor (Sm-S) systems. The Fermi-level catch-up model was further built to depict… read more here.
Keywords: gate tunable; contact induced; level shift; fermi level ... See more keywords