Contact Resistance Engineering in WS2-Based FET with MoS2 Under-Contact Interlayer: A Statistical Approach
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DOI: 10.1021/acsami.4c09688
Abstract: One of the primary factors hindering the development of 2D material-based devices is the difficulty of overcoming fabrication processes, which pose a challenge in achieving low-resistance contacts. Widely used metal deposition methods lead to unfavorable… read more here.
Keywords: resistance; contact resistance; ws2 based; contact interlayer ... See more keywords