Method for contact resistivity measurements on highly phosphorus-doped silicon using a multiline transmission line model
Sign Up to like & getrecommendations! Published in 2021 at "Journal of the Korean Physical Society"
DOI: 10.1007/s40042-020-00048-0
Abstract: As the size of a transistor decreases, the parasitic resistances of the transistor become dominant for contact resistance. In-situ phosphorus-doped epitaxial silicon with high doping concentrations has been used to reduce contact resistivity. In this… read more here.
Keywords: resistivity; contact resistivity; silicon; line model ... See more keywords
Study of contact resistivity of a no-insulation superconducting coil
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DOI: 10.1088/1361-6668/abd14d
Abstract: Previous studies of test coils have demonstrated the high thermal and electrical stability of no-insulation (NI) high temperature superconducting (HTS) coils thanks to the presence of turn-to-turn current paths. These turn-to-turn current paths in a… read more here.
Keywords: resistivity; turn turn; insulation; contact resistivity ... See more keywords
Contact Resistivity of the p-Type Amorphous Silicon Hole Contact in Silicon Heterojunction Solar Cells
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DOI: 10.1109/jphotov.2019.2949430
Abstract: In silicon heterojunction solar cells made with high-lifetime wafers, resistive losses in the contacts dominate the total electrical power loss. Moreover, it is widely believed that the hole contact stack—a-Si:H(i)/a-Si:H(p)/ITO/Ag—is responsible for more of this… read more here.
Keywords: contact; resistivity; solar cells; contact resistivity ... See more keywords
Intrinsic Limits to Contact Resistivity in Transition Metal Dichalcogenides
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DOI: 10.1109/led.2017.2762158
Abstract: Two-dimensional semiconductors provide excellent electrostatic control that is critical for scaled nodes. However, due to their lower dimensionality, contact resistance can be a limiting factor for performance of devices based on these materials. In this… read more here.
Keywords: contact resistance; intrinsic limits; limits contact; transition metal ... See more keywords
Low Contact Resistivity to Ge Using In-Situ B and Sn Incorporation by Chemical Vapor Deposition
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DOI: 10.1109/ted.2020.3019977
Abstract: The low contact resistivity with the median value of $3.1\times 10^{-{9}}\,\,\Omega \cdot \text {cm}^{{2}}$ (the lowest value of $1.1\times 10^{-{9}}\,\,\Omega \cdot \text {cm}^{{2}}$ ) is achieved by Ti metal contact to in-situ B-doped GeSn with… read more here.
Keywords: tex math; inline formula; contact resistivity;