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Published in 2019 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2019.02.031
Abstract: Abstract This work reports on the morphological and electrical properties of Ni-based back-side Ohmic contacts formed by laser annealing process for SiC power diodes. Nickel films, 100 nm thick, have been sputtered on the back-side of…
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Keywords:
morphological electrical;
ohmic contacts;
process;
laser annealing ... See more keywords