Thermodynamic Analysis of the Behavior of Trimethyl Borate as a Precursor for Chemical Vapor Deposition of Boron-Containing Films
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DOI: 10.1134/s0036023618060153
Abstract: The chemical vapor deposition (CVD) of boron-containing films involving the trimethyl borate precursor has been modeled in the ranges of pressures 0.03 ≤ Р, Torr ≤ 760 and temperatures 300 ≤ Т, K ≤ 2000.… read more here.
Keywords: containing films; chemical vapor; borate precursor; vapor deposition ... See more keywords