Effects of oxygen gas on the dry etching of high-Al-content AlGaN layers
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DOI: 10.1063/5.0294588
Abstract: The etching characteristics of AlGaN layers comprising varying Al compositions (50%, 60%, 70%, and 80%) were investigated using Cl2/Ar-based inductively coupled plasma at varying O2 flow rates. A GaN layer was used as a reference… read more here.
Keywords: content algan; algan layers; dry etching; effects oxygen ... See more keywords