Control of V th of the enhancement high-frequency AlGaN/GaN HEMT fabricated by oxygen-based digital etching
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DOI: 10.35848/1882-0786/ac32a6
Abstract: We established an oxygen-based digital etching technique to fabricate the recessed gate structure for RF GaN HEMT. The digital etching rates were 2.5 nm cycle–1 and 0.5 nm cycle–1 with 40 W RF bias and… read more here.
Keywords: digital etching; control enhancement; oxygen based; gan hemt ... See more keywords