Investigation on the device geometry-dependent reverse recovery characteristic of AlGaN/GaN lateral field-effect rectifier (L-FER)
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DOI: 10.1016/j.spmi.2018.06.020
Abstract: Abstract In this work, the dependence of the AlGaN/GaN L-FERs’ reverse recovery characteristics on the device geometry (MOS-controlled channel length) is investigated by TCAD Sentaurus. It is found that the reverse recovery time and reverse… read more here.
Keywords: reverse recovery; mos controlled; algan gan; controlled channel ... See more keywords