Gate-controlled spin-valley-layer locking in bilayer transition-metal dichalcogenides.
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DOI: 10.1039/d0nr04630b
Abstract: The interplay between various internal degrees of freedom of electrons is of fundamental importance for designing high performance electronic devices. A particular instance of this interplay can be observed in bilayer TMDs due to the… read more here.
Keywords: spin valley; gate controlled; valley layer; controlled spin ... See more keywords