Gate-controlled supercurrent in ballistic InSb nanoflag Josephson junctions
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DOI: 10.1063/5.0071218
Abstract: High-quality III-V narrow band gap semiconductor materials with strong spin-orbit coupling and large Landé g-factor provide a promising platform for next-generation applications in the field of high-speed electronics, spintronics, and quantum computing. Indium Antimonide (InSb)… read more here.
Keywords: controlled supercurrent; gate controlled; insb; josephson ... See more keywords