Spatially controlled VLS epitaxy of gallium arsenide nanowires on gallium nitride layers
Sign Up to like & getrecommendations! Published in 2020 at "CrystEngComm"
DOI: 10.1039/c9ce01926j
Abstract: We present Au catalyzed p-GaAs nanowire growth on n-GaN layers as a possible method to grow an arsenide on a nitride compound semiconductor by metal organic vapor phase epitaxy. The GaAs growth position, the nanowire… read more here.
Keywords: spatially controlled; nanowire growth; nanowire; growth ... See more keywords