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Published in 2019 at "Materials Horizons"
DOI: 10.1039/c8mh01499j
Abstract: The linear shift in VDirac of a flexible GFET, caused by the flexoelectric effect of a PLZT gate, makes it enormously useful for both tuning the graphene doping state and detecting bending curvature.
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Keywords:
graphene;
voltage graphene;
point voltage;
dirac point ... See more keywords