Thermal Analysis and Operational Characteristics of an AlGaN/GaN High Electron Mobility Transistor with Copper-Filled Structures: A Simulation Study
Sign Up to like & getrecommendations! Published in 2019 at "Micromachines"
DOI: 10.3390/mi11010053
Abstract: In this study, we investigated the operational characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) by applying the copper-filled trench and via structures for improved heat dissipation. Therefore, we used a basic T-gate HEMT device… read more here.
Keywords: operational characteristics; algan gan; characteristics algan; copper filled ... See more keywords