Fusion bonding of copper and silicon at -70 °C by electrochemistry
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DOI: 10.1016/j.actamat.2020.116486
Abstract: Abstract Wafer bonding processing typically employs thermal energy to fuse two surfaces by stimulating atomic interdiffusion at high temperatures. However, we found that the fusion bonding of copper and silicon can occur at an extremely… read more here.
Keywords: copper silicon; fusion bonding; electrochemistry; silicon ... See more keywords
Performant implementation of the atomic cluster expansion (PACE) and application to copper and silicon
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DOI: 10.1038/s41524-021-00559-9
Abstract: The atomic cluster expansion is a general polynomial expansion of the atomic energy in multi-atom basis functions. Here we implement the atomic cluster expansion in the performant C++ code PACE that is suitable for use… read more here.
Keywords: atomic cluster; expansion; pace; cluster expansion ... See more keywords