Structural and electronic properties of a -edge dislocations along ⟨1-100⟩ in GaN
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DOI: 10.1063/1.5034198
Abstract: Computational analysis via molecular dynamics and density functional theory simulations elucidated the structural and electronic properties of a-type basal edge dislocations lying in the ⟨1–100⟩ direction in wurtzite GaN. As a particular and predominant type… read more here.
Keywords: structural electronic; edge dislocations; core configurations; electronic properties ... See more keywords