Nanowire FET With Corner Spacer for High-Performance, Energy-Efficient Applications
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DOI: 10.1109/ted.2017.2764511
Abstract: Parasitic capacitance in nanoscale FETs is becoming a dominant component of the total device capacitance which degrades device and circuit performance. This problem is exacerbated with the introduction of multigate FETs such as FinFET and… read more here.
Keywords: spacer; nanowire fet; corner spacer; performance ... See more keywords