Impact of rounded electrode corners on breakdown characteristics of AlGaN/GaN high-electron mobility transistors
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DOI: 10.7567/apex.11.054102
Abstract: We investigated the impact of rounded electrode corners on the breakdown characteristics of AlGaN/GaN high-electron mobility transistors. For standard reference devices, catastrophic breakdown occurred predominantly near the sharp electrode corners. By introducing a rounded-electrode architecture,… read more here.
Keywords: electrode corners; impact rounded; corners breakdown; characteristics algan ... See more keywords